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通过离子注入技术制备出GaMnN三元磁性半导体材料。Raman光谱,X射线衍射和光致发光谱(PL)揭示了Mn在材料中的晶体结构与电子结构。这些基本表征结果表明注入的Mn占据了晶格位置,且多数形成了GaMnN三元相。超导量子干涉仪的测量结果表明合成的材料在室温下仍有铁磁性。磁化强度随温度的变化曲线表明材料中存在着不同的铁磁机制。
The GaMnN ternary magnetic semiconductor material was prepared by ion implantation technology. Raman spectroscopy, X-ray diffraction and photoluminescence (PL) revealed the crystal structure and electronic structure of Mn in the material. These basic characterization results indicate that the injected Mn occupies the lattice sites and most of the GaMnN ternary phases are formed. The measurement results of the superconducting quantum interferometer show that the synthesized material is still ferromagnetic at room temperature. The curve of magnetization with temperature shows that there are different ferromagnetic mechanisms in the material.