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因一维光子晶体的许多应用由其场强分布特性所决定,本文研究了无规全角高反一维光子晶体场强分布的性质,结果表明在带隙内,两者的场强分布无明显差别,但在研究各种应用和器件关系最密切的带隙边缘,周期结构的场强分布只有对称性的一种;无规结构光子晶体的谱带边缘电场分布特性则完全可按应用要求进行设计和控制,为光子晶体器件设计提供了全新的思路.
Because many applications of one-dimensional photonic crystals are determined by the distribution of their field strength, the properties of the field intensity distribution of a random full-angle, one-dimensional and one-dimensional photonic crystal are studied. The results show that there is no obvious field strength distribution in the band gap However, the field strength distribution of the periodic structure is only a kind of symmetry when studying the edge of the bandgap where the applications and devices are most closely related. The distribution of the electric field at the edge of the band edge of the random structure photonic crystal can be fully applied according to the application requirements Design and control, for the photonic crystal device design provides a new idea.