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本文首先证明,在经典理论中,把半导体内电位分布简单地用能级来表征的做法对异质结已不再适用.在承认经典电流密度方程和爱因斯坦关系成立的前提下,导出了半导体内电位分布同本征费米能级之间的普遍关系,并进一步得出确定突变异质结界面上导带不连续性△Ec数值的新定则.它比经典“亲和能定则”更为符合近年来用光电子能谱测量的实验结果.
This paper first proves that in the classical theory, the method of simply characterizing the distribution of potential in the semiconductor by the energy level is no longer suitable for the heterojunction. On the premise of admitting the relation between classical current density equation and Einstein’s equation, The general relationship between the potential distribution in the semiconductor and the intrinsic Fermi level and a new rule to determine the △ Ec value of conduction band discontinuity at the interface of the mutant heterojunction are further obtained.It is better than the classical “ ”More in line with the experimental results of photoelectron spectroscopy measured in recent years.