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高量子效率、高UV/VIS抑制比、宽的光谱响应范围、快的响应速度是AlGaN紫外探测器设计追求的主要目标。为了获得适宜于紫外焦平面阵列的探测器结构,结合MOCVD外延材料生长的特点,采用模拟计算与实验相结合的方法,设计了背照式高量子效率AlGaN日盲探测器。详细介绍了背照式Al x Ga1-x N-pin紫外探测器结构参数设计的依据和设计过程,并给出了设计结果,通过工艺实验,对设计结果进行了优化。应用设计结果进行了器件试制,经测试试制器件,其峰值响应波长为270 nm,光谱响应范围为250~282 nm,峰值量子效率达到了57%(0 V),实验表明取得了比较理想的设计结果。
High quantum efficiency, high UV / VIS suppression ratio, wide spectral response range and fast response speed are the main goals of AlGaN UV detector design. In order to obtain the detector structure suitable for the UV focal plane array, combined with the characteristics of MOCVD epitaxial growth, a backlit high quantum efficiency AlGaN solar blind detector was designed by means of simulation and experiment. The design basis and design process of back-illuminated Al x Ga 1-x N-pin UV detector are introduced in detail. The design results are given. The design results are optimized through the process experiment. The results of the design of the device were tested. The tested device has a peak response wavelength of 270 nm, a spectral response range of 250-282 nm and a peak quantum efficiency of 57% (0 V). Experiments show that the ideal design result.