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Bi-4Ti-3O-(12)(BIT)是一种重要的铁电材料,Curie温度为675℃,自发极化矢量位于a-c平面上有两个分量,在外场作用下可以各自独立地反向,且沿c方向矫顽场强很低,为3.skV/cm.开关速度快,抗辐射能力强,抗疲劳特性好.在无外场作用下能保持记忆,具有与半导体工艺集成的潜力.特别是c轴取向的BIT薄膜不仅能作电场记忆,还能实现光记忆,很适合作铁电存储器、电光器件、光存储显示材料,具有广泛的研究开发和应用前景,该材料已成为当今国际上研究的主要材料之一.
Bi-4Ti-3O- (12) (BIT) is an important ferroelectric material. The Curie temperature is 675 ℃. The spontaneous polarization vector has two components on the ac plane and can be reversed independently , And the coercive field strength along the c direction is very low, 3.skV / cm. Switching speed, strong anti-radiation ability, good anti-fatigue properties in the absence of external field to maintain memory, integrated with the semiconductor process potential. In particular, the c-axis oriented BIT film can not only make electric field memory but also achieve optical memory. It is suitable for ferroelectric memory, electro-optic device and optical memory display material. It has extensive research, development and application prospects. The material has become the world’s current international One of the main materials on the study.