A novel planar vertical double-diffused metal-oxide-semiconductor field-effect transistor with inhom

• 作 者: 任敏 李泽宏 刘小龙 谢加雄 邓光敏 张波
• 机 构: State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Scienc
• 出 处: Chinese Physics B
• 发表日期: 2011年12期
• 关键词: floating inhomogeneous transistor VDMOS breakdown planar drift drain distinctive

A novel planar vertical double-diffused metal-oxide-semiconductor (VDMOS) structure with an ultra-low specific on-resistance (R on,sp),whose distinctive feature is the use of inhomogeneous floating p-islands in the n-drift region,is proposed.The theoretical limit of its R on,sp is deduced,the influence of structure parameters on the breakdown voltage (BV) and R on,sp are investigated,and the optimized results with BV of 83 V and R on,sp of 54Ωm·mm 2 are obtained.Simulations show that the inhomogeneous-floating-islands metal-oxide-semiconductor field-effect transistor (MOSFET) has a superior “R on,sp /BV” trade-off to the conventional VDMOS (a 38% reduction of R on,sp with the same BV) and the homogeneous-floating-islands MOSFET (a 10% reduction of R on,sp with the same BV).The inhomogeneous-floating-islands MOSFET also has a much better body-diode characteristic than the superjunction MOSFET.Its reverse recovery peak current,reverse recovery time and reverse recovery charge are about 50,80 and 40% of those of the superjunction MOSFET,respectively.

A novel planar vertical double-diffused metal-oxide-semiconductor (VDMOS) structure with an ultra-low specific on-resistance (R on, sp), whose distinctive feature is the use of inhomogeneous floating p-islands in the n-drift region , is proposed. The theoretical limit of its R on, sp is deduced, the influence of structure parameters on the breakdown voltage (BV) and R on, sp are investigated, and the optimized results with BV of 83 V and R on, sp of 54 Ωm · mm 2 are obtained. Simulations show that the inhomogeneous-floating-islands metal-oxide-semiconductor field-effect transistor (MOSFET) has a superior “R on, sp / BV” trade- off to the conventional VDMOS ( a 38% reduction of R on, sp with the same BV) and the homogeneous-floating-islands MOSFET (a 10% reduction of R on, sp with the same BV). The inhomogeneous-floating-islands MOSFET also has a much better body-diode characteristic than the superjunction MOSFET.Its reverse recovery peak current, reverse recovery time and reverse recovery charge are abo ut 50,80 and 40% of those of the superjunction MOSFETs, respectively.