后退火对In_xGa_(1-x)As单层量子点光学性质的影响(英文)

• 作 者: 赵震
• 机 构: 俄罗斯科学院Ａ．Ｆ．Ｉｏｆfｅ物理技术研究所
• 出 处: 强激光与粒子束
• 发表日期: 1999年03期
• 关键词: 量子点 In_xGa x)As 半导体激光器 光学性质 退火工艺 谱线宽度 摩尔分数

研究了以ＧａＡｓ和Ａｌ０．１５Ｇａ０．８５Ａｓ为基体，当铟的摩尔分数（ｘ）不同时，后退火对ＩｎｘＧａ１－ｘＡｓ单层量子点光致荧光（ＰＬ）谱特性的影响。后退火将导致铟含量不同的样品（ｘ＝０．２３，０．３７，０．５０，１．０）的ＰＬ谱线宽度变窄和蓝移。对于ＧａＡｓ基体，在７００℃退火９０分钟所造成的ＰＬ谱蓝移与退火３０分钟相似；（仅当ｘ＝０．２３时，退火９０分钟所造成的ＰＬ谱蓝移小于３０分钟）。对于Ａｌ０．１５Ｇａ０．８５Ａｓ基体，在７００℃退火３０分钟和９０分钟，其ＰＬ谱蓝移是不同的。

The effects of post-anneal on the PL spectra of single-layer InxGa1-xAs quantum dots with GaAs and Al0.15Ga0.85As as the matrix were studied when the molar fraction (x) of indium is different. Post-annealing results in narrowing and blue-shift of the PL line width for samples with different indium contents (x = 0.23, 0.37, 0.50, 1.0). For GaAs substrates, the blue PL shift caused by annealing at 700 ° C for 90 min was similar to annealing for 30 min; (blue annealing for PL spectra caused by annealing for 90 min at x = 0.23 was less than 30 min). For the Al0.15Ga0.85As matrix, the blue-shifted PL spectra were different when annealed at 700 ℃ for 30 minutes and 90 minutes.