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对 Ｓｉ Ｃ陶瓷与 Ｔｉ Ａｌ金属间化合物进行了真空扩散连接， 提出了界面反应层的成长模型， 并在试验结果的基础上给出了模型的具体表达式， 为控制接头的界面结构进而改善接头的性能提供了理论依据。
The diffusion bonding between Si C ceramics and TiAl intermetallics was carried out. The growth model of interfacial reaction layer was put forward. Based on the experimental results, the concrete expression of the model was given. In order to control the interface structure of the joint and improve the joint The performance provided a theoretical basis.