Characteristics of drain-modulated generation current in n-type metal-oxide-semiconductor field-effe

• 作 者: 陈海峰 过立新 郑璞阳 董钊 张茜
• 机 构: School of Electronic Engineering,Xi’an University of Posts and Telecommunications,
• 出 处: Chinese Physics B
• 发表日期: 2015年07期
• 关键词: drain modulated transistor depletion saturation fitting exponential corner quick

Drain-modulated generation current IDMGinduced by interface traps in an n-type metal-oxide-semiconductor fieldeffect transistor(n MOSFET) is investigated. The formation of IDMGascribes to the change of the Si surface potential φs.This change makes the channel suffer transformation from the inversion state, depletion I state to depletion II state. The simulation result agrees with the experiment in the inversion and depletion I states. In the depletion II state, the theoretical curve goes into saturation, while the experimental curve drops quickly as VDincreases. The reason for this unconformity is that the drain-to-gate voltage VDGlessens φs around the drain corner and controls the falling edge of the IDMG curve.The experiments of gate-modulated generation and recombination currents are also applied to verify the reasonability of the mechanism. Based on this mechanism, a theoretical model of the IDMGfalling edge is set up in which IDMGhas an exponential attenuation relation with VDG. Finally, the critical fitting coefficient t of the experimental curves is extracted. It is found that t = 80 m V = 3k T /q. This result fully shows the accuracy of the above mechanism.

Drain-modulated generation current IDMGinduced by interface traps in an n-type metal-oxide-semiconductor fieldeffect transistor (n MOSFET) is investigated. The formation of IDMGascribes to the change of the Si surface potential φs.This change makes the channel suffer transformation from the inversion state, depletion I state to depletion II state. The simulation result agrees with the experiment in the inversion and depletion I states. In the depletion II state, the theoretical curve goes into saturation, while the experimental curve drops quickly as VDincreases. The reason for this unconformity is that that drain-to-gate voltage VDGlessens φs around the drain corner and controls the falling edge of the IDMG curve. these experiments of gate-modulated generation and recombination currents are also applied to verify the reasonability of the mechanism. Based on this mechanism, a theoretical model of the IDMGfalling edge is set up in which IDMGhas an exponential attenuation relation with VDG. It is found that t = 80 m V = 3k T / q. This result fully shows the accuracy of the above mechanism.