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该发明介绍了一种把单晶半导体层分割成在电气上互相绝缘的领域的集成电路用基体的刻法。如图1所示,在板状的单晶半导体层1上,做成格子状突起部份2的表面上复盖一层绝缘性薄膜3。接着采用刻蚀方法,把突起部份2上的复盖膜层的一部份除去,以使基体1的一部份显露在外(图2),然后在基体1的表面1a 上再复盖一层厚度约为5μ的多晶半导体材料层14。随后使基体1保持在融点以下的高温,再用红外线或电子束来对半导体材料层4进行局部加热到比基体1融点高出约20—60℃,由与基体1直接接融的部份起依次向其它部份移动,
This invention describes a method of dividing a single crystal semiconductor layer into a substrate for an integrated circuit in the field of being electrically insulated from each other. As shown in Fig. 1, on the plate-like single crystal semiconductor layer 1, a surface of the lattice-shaped projecting portion 2 is covered with an insulating film 3. Next, a portion of the cover film on the raised portion 2 is removed by etching to expose a portion of the substrate 1 (FIG. 2) and then over the surface 1a of the substrate 1 The polycrystalline semiconductor material layer 14 has a layer thickness of about 5μ. Subsequently, the substrate 1 is kept at a high temperature below the melting point, and then the semiconductor material layer 4 is locally heated by infrared rays or electron beams to a temperature about 20-60C higher than the melting point of the substrate 1, from the portion directly fused with the substrate 1 Followed by the other part of the move,