Sentaurus~based modeling and simulation for GFET's characteristic for ssDNA immobilization and

• 作 者: 贾芸芳 琚成
• 机 构: College of Electronic Information and Optical Engineering, Nankai University,
• 出 处: Journal of Semiconductors
• 发表日期: 2016年01期
• 关键词: DNA immobilization ssDNA transistor blank Figure conductance drain accumulated i

The graphene field effect transistor(GFET) has been widely studied and developed as sensors and functional devices. The first report about GFET sensing simulation on the device level is proposed. The GFET’s characteristics, its responding for single strand DNA(ss DNA) and hybridization with the complimentary DNA(cDNA) are simulated based on Sentaurus, a popular CAD tool for electronic devices. The agreement between the simulated blank GFET feature and the reported experimental data suggests the feasibility of the presented simulation method. Then the simulations of ss DNA immobilization on GFET and hybridization with its c DNA are performed,the results are discussed based on the electron transfer(ET) mechanism between DNA and graphene.

The first published report about GFET sensing simulation on the device level is proposed. The GFET’s characteristics, its responding for single strand DNA (ss DNA) and hybridization with the complimentary DNA (cDNA) are simulated based on Sentaurus, a popular CAD tool for electronic devices. The agreement between the simulated blank GFET feature and the reported experimental data suggests the feasibility of the presented simulation method. Then the simulations of ss DNA immobilization on GFET and hybridization with its c DNA are performed, the results are discussed based on the electron transfer (ET) mechanism between DNA and graphene.