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利用金属有机物化学气相沉积法在蓝宝石衬底上生长了Mn掺杂GaN基稀磁半导体材料。原子力显微镜研究表明,少量的Mn在样品表面起到活性作用。X射线衍射和喇曼散射研究表明,当Mn的掺杂浓度很低(<2.7%)时并没有观察到第二相的出现,当Mn的掺杂浓度达到3.9%时观察到了第二相。采用光学测试得到了由于Mn杂质引入杂质能级和缺陷而产生一个很宽的发射和吸收谱。
Mn-doped GaN-based diluted magnetic semiconductor material was grown on a sapphire substrate by a metal-organic chemical vapor deposition method. Atomic force microscopy studies have shown that a small amount of Mn plays an active role on the sample surface. X-ray diffraction and Raman scattering studies show that the second phase is not observed when the doping concentration of Mn is very low (<2.7%), and the second phase is observed when the doping concentration of Mn reaches 3.9%. Optical testing results in a broad emission and absorption spectrum due to the incorporation of Mn impurities into the impurity levels and defects.