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功率MOSFET的精确模型对于CAD电路模拟并不广泛适用。本文介绍一种与SPICEⅡ软件相匹配并适合MOSFET端子测量的功率MOS子电路模型。本工作选择SPICEⅡ作为电路模拟程序,是因为它有普遍的使用价值,尽管也存在其固有的局限性。这些局限性可通过电路方法予以回避。鉴于子电路模拟功率MOSFET端予行为带有与SPICEⅡ相同的局限性,故它不同于有关文献中提供的物理模型。然而,它在模拟功率MOSFET的行为,尤其是动态开关性能、第三象限工作、雪崩模式的模拟及二极管恢复波形等方面,优越于先前进行的工作。
The exact model of a power MOSFET is not widely applicable to CAD circuit simulations. This article presents a power MOS sub-circuit model that matches SPICE II software and is suitable for MOSFET terminal measurements. This work chose SPICE Ⅱ as a circuit simulation program because of its universal value, though its inherent limitations also exist. These limitations can be circumvented by circuit methods. Since the sub-circuit analog power MOSFET terminal behavior has the same limitations as SPICE II, it differs from the physical model provided in the literature. However, it outperforms previous work in simulating the behavior of power MOSFETs, especially in dynamic switching performance, third quadrant operation, avalanche mode simulations, and diode recovery waveforms.