论文部分内容阅读
采用NbCl5作为先驱物 ,利用溶胶 凝胶法在Si(10 0 )衬底上成功获得高度择优取向的铁电铌酸锶钡 (SBN)薄膜 .与用Nb(OC2 H5) 5作为先驱物的SBN薄膜相比 ,NbCl5配制的薄膜前驱溶液中含有一定数量的K离子 .K离子的含量对SBN薄膜取向的影响存在一个最优值 .二次离子质谱测试发现 ,K离子对SBN晶胞的溶入和对Si衬底的渗透能够同时使SBN晶胞和Si晶胞产生微小扭曲 ,从而起到调整薄膜与衬底的匹配关系 ,并最终促使SBN薄膜c轴高度择优取向的生长 .测试了薄膜的光学特性 .
A highly preferred oriented ferroelectric barium strontium barium (SBN) thin film was successfully obtained on a Si (100) substrate by sol-gel method using NbCl5 as a precursor. Compared with SBN with Nb (OC2 H5) 5 as a precursor Compared with the film, the NbCl5 film precursor solution contains a certain amount of K ions.K content of SBN film orientation has an optimal value.Seed ion mass spectrometry test found that, K ion SBN unit cell dissolution And the infiltration of Si substrate can make the SBN unit cell and the Si unit cell produce tiny twists at the same time, so as to adjust the matching relationship between the film and the substrate, and finally promote the c-axis of the SBN film to have a highly preferred orientation growth. Optical characteristics.