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在室温下用308 MeV的Xe离子和853 MeV的Pb离子辐照Ni/Si O2样品,用卢瑟福背散射和X射线衍射技术对样品进行了分析。通过分析Ni/SiO2样品中元素成分分布和结构随离子辐照剂量和电子能损的变化,探索了离子辐照在Ni/SiO2样品中引起的界面原子混合与结构相变现象。实验结果显示,Xe和Pb离子辐照均能引起明显的Ni原子向SiO2基体的扩散并导致界面附近Ni,Si和O原子的混合。实验观测到低剂量Xe离子辐照可产生NiSi2相,而高剂量Xe离子辐照则导致了Ni3Si和Ni O相的形成。根据热峰模型,Ni原子的扩散和新相的形成可能由沿离子入射路径强电子激发引起的瞬间热峰过程驱动。
Ni / Si O2 samples were irradiated with 308 MeV Xe ions and 853 MeV Pb ions at room temperature, and the samples were analyzed by Rutherford backscattering and X-ray diffraction. By analyzing the variation of elemental composition and structure of Ni / SiO2 samples with ion irradiation dose and electron loss, the interfacial atom mixing and structural phase transition induced by ionizing radiation in Ni / SiO2 samples were explored. The experimental results show that both Xe and Pb ion irradiation can cause obvious diffusion of Ni atoms into SiO2 matrix and result in the mixing of Ni, Si and O atoms near the interface. It was observed experimentally that NiSi2 phase can be produced by low dose Xe ion irradiation, while high dose Xe ion irradiation leads to the formation of Ni3Si and NiO phase. According to the hot-peak model, the diffusion of Ni atoms and the formation of new phases may be driven by the transient heat peak process caused by strong electron excitation along the ion entrance path.