论文部分内容阅读
室温下用80keVN离子注入ZnO薄膜样品,注量分别为5.01014,5.01015和5.01016ions/cm2,然后用X射线衍射和透射电镜技术对样品的结构特性进行了表征。实验结果表明,由高度(002)择优取向的致密柱状晶构成的薄膜中,注入5.0×1015ions/cm2时,观测到缺陷生成和局域无序化现象,但薄膜总体结构仍保持柱状晶和(002)择优取向;随着注量的增大,晶格常数c和压应力呈增大趋势。对注入N离子对ZnO薄膜结构特性的影响机理进行了简单的讨论。
ZnO films were implanted with 80keVN ions at room temperature for 5.01014, 5.01015 and 5.01016ions / cm2, respectively. The structural characteristics of the samples were characterized by X-ray diffraction and transmission electron microscopy. The experimental results show that the formation of defects and the localized disorder are observed in the films composed of highly ordered (002) ordered columnar crystals with 5.0 × 10 15 ions / cm 2 implantation. However, the overall structure of the films remains as columnar and ( 002) preferred orientation; with the increase of the fluence, the lattice constant c and compressive stress showed an increasing trend. The mechanism of the influence of N ion implantation on the structural characteristics of ZnO films is briefly discussed.