论文部分内容阅读
引言 在以硅单晶为基础材料的半导体器件制造过程中,每当用HF去除硅表面SiO_2。层或用HF-HNO_3溶液对硅片进行化学清洗时,硅表面往往会发生染色的异常现象(有人称它为腐蚀花班、着色膜或掩膜)。尽管染色硅膜是在许多不同的偶然机遇中生成的,但多数都表现出不易受HF腐蚀的特点。因此,染色硅膜一旦在硅表面形成,就很难去除。它的存在不仅可以起到掩蔽扩散的作用,还可以造成电极接触不良,严重的可以导致整批硅片报废,直接影响产品合格率和工艺参数的控制,对器件生产危害很大。
INTRODUCTION In the manufacture of semiconductor devices based on silicon single crystals, each time HF is used to remove silicon surface SiO 2. When silicon wafers are chemically cleaned with HF-HNO 3 solution, the silicon surface tends to stain abnormally (some call it erosion, color film, or mask). Although dyed silicon films are generated in many different chance opportunities, most of them exhibit characteristics that are less susceptible to HF corrosion. Therefore, once the dyed silicon film is formed on the silicon surface, it is difficult to remove. Its existence not only can play the role of masking diffusion, but also can cause poor contact of the electrode. It can lead to the scrap of the whole batch of wafer seriously and directly affect the product qualification rate and the control of process parameters, which is harmful to the device production.