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以三甲基铝(TMA)和氨气(NH3)为源,在原子层淀积设备上实现了氮化铝薄膜的制备.通过扫描电子显微镜、X射线能谱仪和原子力显微镜对氮化铝薄膜的生长速率、成分和粗糙度进行了分析,优化了薄膜淀积工艺.以每周期单分子层的生长模式进行氮化铝薄膜淀积,淀积速率为每周期0.205 nm,厚度为61 nm的薄膜粗糙度为0.69 nm.利用原子层淀积氮化铝薄膜的保型性,通过nm级薄膜厚度的控制,制备了复杂的环形光子晶体器件,其工艺精度高达50 nm.
The AlN film was prepared on the atomic layer deposition equipment by using TMA and NH3 as raw materials.The AlN films were characterized by scanning electron microscopy, X-ray energy dispersive spectroscopy and atomic force microscopy The growth rate, composition and roughness of the films were analyzed to optimize the thin film deposition process.The AlN thin films were deposited on a single monolayer per cycle with a deposition rate of 0.205 nm per cycle and a thickness of 61 nm The roughness of the film is 0.69 nm.The complex annular photonic crystal device is fabricated by controlling the shape retention of the AlN film deposited by the atomic layer and controlling the thickness of the nm-scale film, and the process precision is up to 50 nm.