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用ＭＢＥ和原位离子束光刻技术制备的２ＤＥＧ基区热电子晶体管据《ＩＥＥＥＥ．Ｄ．》４２卷第６期报道，Ｓ．Ｇ．Ｉｎｇｒａｍ等以ＧａＡｓ／ＡｌＧａＡｓ系统材料，将原位聚焦离子束（ＦＩＢ）隔离技术与ＭＢＥ再生长工艺相结合，克服了需要形成不同传导层之选择欧姆接...
2DEG base-region thermionic transistors fabricated using MBE and in situ ion beam lithography are described in “IEEEE. D. ”42 Volume 6 reported, S. G. Ingram and other GaAs / AlGaAs system materials, the in situ focused ion beam (FIB) isolation technology and MBE regrinding process combined to overcome the need to form a different conductive layer selection Ohm ...