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GaAs_(1-x)Sb_x可作为1.3～1.6μm光谱范围内的石英光纤通讯的红外发射及探测器材料,本文研究了(100)GaAs衬底上非匹配外延GaAs_(1-x)Sb_x薄膜材料。外延生长是在VP50-RPMOCVD设备上完成的。采用TMG、AsH_3,TMSb为生长源,高纯H_2为载气。(100)偏(110)2°SI-GaAs为衬底,生长温度为560～650℃,Ⅴ/Ⅲ在0.5～2范围内变化。
GaAs_ (1-x) Sb_x can be used as infrared emission and detector materials for quartz optical fiber communication in the range of 1.3-1.6μm. In this paper, the mismatched epitaxial GaAs_ (1-x) Sb_x thin films on (100) . Epitaxial growth is done on a VP50-RPMOCVD device. Using TMG, AsH 3, TMSb as growth source, high purity H 2 carrier gas. (100) partial (110) 2 SI-GaAs substrate growth temperature of 560 ~ 650 ℃, V / Ⅲ in the range of 0.5 ~ 2 changes.