,In-Situ Conductivity Measurement of BaF2 under High Pressure and High Temperature

• 作 者: HAO Ai-Min GAO Chun-Xiao LI Ming HE Chun-Yuan HUANG Xiao-Wei ZHANG Dong-Mei YU Cui-Ling ZOU Guang-Tian LI Yan-Chun LI Xiao-Dong LIU Jing
• 机 构: State Key Laboratory for Superhard Materials, Jilin University, Changchun 130012“,”Department of Mat
• 出 处: 中国物理快报（英文版）
• 发表日期: 2006年11期

We perform the in-situ conductivity measurement on BaF2 at high pressure using a microcircuit fabricated on a diamond anvil cell. The results show that BaF2 initially exhibits the electrical property of an insulator at pressure below 25 Gpa, it transforms to a wide energy gap semiconductor at pressure from 25 to 30 Gpa, and the conductivity increases gradually with increasing pressure from 30 Gpa. However, the metallization predicted by theoretical calculation at 30-33 Gpa cannot be observed. In addition, we measure the temperature dependence of the conductivity at several pressures and obtain the relationship between the energy gap and pressure. Based on the experimental data, it is predicted that BaF2 would transform to a metal at about 87 Gpa and ambient temperature. The conductivity of BaF2 reaches the order of 10-3Ω-1 cm-1 at 37 Gpa and 2400 K, the superionic conduction is not observed during the experiments, indicating the application of pressure elevates greatly the transition temperature of the superionic conduction.