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采用射频磁控溅射与电子束蒸发的方式,制备了ZnO/Ag/ZnO三层复合薄膜,研究了Ag薄膜厚度以及电子束蒸发的沉积速率对复合薄膜光电性能的影响。实验结果表明,当Ag薄膜厚度为8nm、电子束蒸发的沉积速率为0.5nm·s~(-1)时,复合薄膜的性能最优,其方块电阻为6.01Ω,波长400~800nm范围内的光平均透过率为91.39%。优化后的ZnO/Ag/ZnO复合薄膜具有良好的光电特性。
ZnO / Ag / ZnO three-layer composite films were prepared by RF magnetron sputtering and electron beam evaporation. The effects of Ag film thickness and electron-beam evaporation deposition rate on the photoelectric properties of the films were investigated. The experimental results show that the composite films have the best performance when the Ag film thickness is 8nm and the electron beam evaporation deposition rate is 0.5nm · s -1, the sheet resistance is 6.01Ω and the wavelength is in the range of 400 ~ 800nm The average light transmission was 91.39%. The optimized ZnO / Ag / ZnO composite film has good photoelectric properties.