论文部分内容阅读
研制成一种起横向注入激光器作用的GaAs/AlGaAs双异质结双极晶体管(DHBT)。DHBT的外延层用金属有机物汽相外延法(MOVPE)生长。实验揭示室温下晶体管的电流增益大约是10,脉冲光激射阈值为230mA。
A GaAs / AlGaAs double heterojunction bipolar transistor (DHBT) that functions as a lateral injection laser has been developed. The epitaxial layer of DHBT is grown by MOVPE (Metal Organic Vapor Phase Epitaxy). Experiments revealed that the current gain of the transistor at room temperature is about 10 and the pulsed light lasing threshold is 230mA.