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研究了光照对砷化镓阈值电压均匀性的影响 .结果表明光照使耗尽型 MESFET器件的沟道电流增大 ,使阈值电压向负方向增加 ,并提高了阈值电压的均匀性 .研究认为砷化镓单晶材料的深能级缺陷是影响 MESFET阈值电压均匀性的重要因素之一 ,而光照在一定程度上减弱了这一影响
The effect of illumination on the uniformity of threshold voltage of gallium arsenide (GaAs) was investigated. The results showed that the channel current of exhausted MESFET was increased by light irradiation, the threshold voltage was increased in the negative direction and the threshold voltage uniformity was improved. The deep level defects of GaAs single-crystal materials are one of the important factors that influence the threshold voltage uniformity of MESFETs. However, the illumination weakens this effect to a certain extent