Enhanced performance of InGaN/GaN multiple quantum well solar cells with patterned sapphire substrat

• 作 者: 井亮 肖红领 王晓亮 王翠梅 邓庆文 李志东 丁杰钦 王占国 侯洵
• 机 构: Key Laboratory of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sci
• 出 处: Journal of Semiconductors
• 发表日期: 2013年12期
• 关键词: sapphire alleviate thinner primarily epitaxial fabrication attributed terrestria

In this paper,the enhanced performance of InGaN/GaN multiple quantum well solar cells grown on patterned sapphire substrates(PSS) was demonstrated.The short-circuit current(Jsc/ density of the solar cell grown on PSS showed an improvement of 60%,compared to that of solar cells grown on conventional sapphire substrate.The improved performance is primarily due to the reduction of edge dislocations and the increased light absorption path by the scattering from the textured surface of the PSS.It shows that the patterned sapphire technology can effectively alleviate the problem of high-density dislocations and low Jsc caused by thinner absorption layers of the InGaN based solar cell,and it is promising to improve the efficiency of the solar cell.

In this paper, the enhanced performance of InGaN / GaN multiple quantum well solar cells grown on patterned sapphire substrates (PSS) was demonstrated. The short-circuit current (Jsc / density of the solar cell grown on PSS showed an improvement of 60% compared to that of solar cells grown on conventional sapphire substrate. The improved performance is primarily due to the reduction of edge dislocations and the increased light absorption path by the scattering from the textured surface of the PSS. It illustrates that the patterned sapphire technology can effectively alleviate the problem of high-density dislocations and low Jsc caused by thinner absorption layers of the InGaN based solar cell, and it is promising to improve the efficiency of the solar cell.