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利用分子束外延(MBE)设备生长了AI/GaAs(100)肖特基结.通过C-V和I-V电学特性测量看到,肖特基势垒高度随热处理温度上升而增高(≤450℃).同时利用AES和XPS表面分析技术以及喇曼散射光谱研究界面结构、化学反应以及热处理引起的互扩散.实验结果表明,在富As的MBE GaAs(100)-C(2× 8)表面上淀积Al而形成的界面存在AlAs化合物;在较高的温度(≥450℃)下热处理,加剧了界面中的化学反应,并导致元素的互扩散,从而破坏了理想的突变结,使电学性能变差;还鉴别出由于Al进入GaAs层中置换Ga而形成Al_xGa_(1-x)As固溶体
The Al / GaAs (100) Schottky junctions were grown by molecular beam epitaxy (MBE), and the Schottky barrier height increased with the heat treatment temperature (≤450 ℃) by CV and IV electrical measurements. Interdiffusion induced by interfacial structure, chemical reaction and heat treatment were studied by AES and XPS surface analysis and Raman scattering spectroscopy.The experimental results show that Al (superscript 2 +) is deposited on the surface of As-rich MBE GaAs (100) -C AlAs compounds are formed at the interface; heat treatment at higher temperature (≥450 ℃) exacerbates the chemical reaction in the interface and leads to the mutual diffusion of elements, thus destroying the ideal sudden junctions and deteriorating the electrical properties; It was also identified that an AlxGa_ (1-x) As solid solution was formed due to the substitution of Ga for Al into the GaAs layer