论文部分内容阅读
南京电子器件研究所已于1987年研制定型了一种WC67型Ku波段砷化镓功率场效应晶体管。器件采用C-403型管壳封装,在16～18GHz下,1分贝增益压缩点的输出功率P_(1dB)大于100mW,增益G_(1dB)为4～5dB,可通用于S,C,X和Ku波段作线性功率放大。 由于采用所内自制的砷化镓材料,引入了先进的中紫外光刻技术进行亚微米的精细加工,并融合了台面隔离、空气桥互连等结构和工艺方法,器件制作比较简便,易于实现批量生产。 WC67型砷化镓场效应管在14.5GHz下测量,可得到P_(1dB)>200mW,G_(1dB)>7.5dB,已和日本电气公司的Ku波段产品NE900175相当。
Nanjing Institute of Electronic Devices in 1987 developed a type of WC67 Ku-band GaAs power FET. The device is packaged in a C-403 package. The output power P_ (1dB) at 1dB gain compression point is greater than 100mW and the gain G_ (1dB) is 4 ~ 5dB at 16 ~ 18GHz. Ku band for linear power amplification. Due to the homemade gallium arsenide material introduced into the advanced UV lithography sub-micron fine processing, and the integration of mesa isolation, air bridge interconnection and other structures and processes, the device is relatively simple, easy to achieve batch produce. WC67 type gallium arsenide field-effect transistor measured at 14.5GHz, available P_ (1dB)> 200mW, G_ (1dB)> 7.5dB, and the Japanese company Ku-band products NE900175 equivalent.