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报道了采用不同的电介质薄膜 Si O2 、Si Ox Ny、Si3N4 和 Si Ox Py Nz 及其组合用于 In Ga As P/In P多量子阱材料的包封源 .在高纯氮气保护下经 85 0℃、7s的快速退火处理 ,结果发现 :含磷组分 Si Ox Py Nz 电介质薄膜包封下的 In-Ga As P/In P量子阱带隙展宽十分显著 ,高达 2 2 4 me V ,PL谱峰值波长蓝移 342 nm ,半宽较窄仅为 2 5 nm ,说明量子阱性能保持十分良好 ,并对此现象的成因做了初步分析
Reported the encapsulation source using different dielectric thin films Si O2, Si Ox Ny, Si3N4 and Si Ox Py Nz and combinations thereof for In Ga As P / In P multiple quantum well materials under the condition of 85 0 ℃ and 7s. The results show that the bandgap broadening of In-Ga As P / In P quantum well under the Si Ox Py Nz dielectric film containing phosphorus is very significant, up to 2 24 meV, the PL spectrum The peak wavelength is blue-shifted by 342 nm and the half-width is only 25 nm, which shows that the performance of the quantum well remains very good and a preliminary analysis of the cause of this phenomenon