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研究了长时间的工作对小面积高辐射率GaAs LED特性的影响。考察了室温与高温(直到215℃)两种条件下工作的悄况,使用的电流密度在10~2安培·厘米~(-2)到1.5×10~5安培·厘米~(-2)范围内。发现了三种老化方式并讨论了他们的影响和可能的起源。预计那些在工作中保持透明的器件具有接近10~7小时的室温寿命。在一次持续室温寿命试验中一些器件在连续工作20000小时之后仅有微不足道的老化。 发现具有暗结构的器件衰减得比预计的室温半寿命(在10~4～10~5小时之间的快得多。描绘了多种类型的暗结构并提出了一种<110>暗线缺陷的生长机理。
The effect of long working hours on the characteristics of GaAs LEDs with small area and high emissivity has been studied. The working conditions under room temperature and high temperature (up to 215 ℃) were investigated. The current density was in the range of 10 ~ 2 A · cm -2 to 1.5 × 10 -5 A · cm ~ (-2) Inside. Three ways of aging were uncovered and their impact and possible origins were discussed. Devices that are expected to be transparent at work are expected to have room-temperature lifetimes of approximately 10 to 7 hours. Some devices have only insignificant aging after a continuous 20,000 hours of operation at a continuous RT test. Devices with dark structures were found to decay more than expected half life at room temperature (much faster between 10 and 4 to 10 to 5 hours.) Various types of dark structures were depicted and a <110> dark line defect was proposed Growth mechanism.