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半导体IC正在向高集成化方向迅速发展着,尤其是DRAM的集成度正在64K位向256K位乃至1M位发展。目前制造的64KDRAM是按2.5μm的规则设计的,而256KDRAM将按1.5μm的规则设计,1MDRAM将按1μm的规则设计。随着图形线宽的微细化变化,光刻工艺中的总套准精度最好能达到复印线宽的1/10以下,而现阶段要求做到1/4～1╱5。以1M位DRAM为例,要制造这种器件,光刻机的实用分辨率应达到1μm,总套准精度应达到0.25μm(3σ),缩小投影光刻机能够满足上述要求,这种分步光刻机将成为制造VLSI的主要光刻设备。当到了1M位或者集成度更高的DRAM时,实用分辨率应达到0.7μm,总套准精度达到0.15
Semiconductor ICs are rapidly evolving toward highly integrated circuits. In particular, the integration of DRAMs is growing from 256K bits to 256K bits or even 1M bits. Currently manufactured 64KDRAM is designed according to the rule of 2.5μm, while 256KDRAM will be designed according to the rule of 1.5μm, 1MDRAM will be designed according to the rule of 1μm. With the miniaturization of the line width of the pattern, the total collation accuracy in the lithography process is preferably up to 1/10 of the line width of the copy line, and at this stage it is required to achieve 1 / 4-1 / 5. To 1M-bit DRAM, for example, to produce this device, the practical resolution of the lithography machine should reach 1μm, the total register accuracy should reach 0.25μm (3σ), narrow projection lithography machine to meet the above requirements, this step The lithography machine will become the main lithographic apparatus for VLSI fabrication. When it comes to 1M bit or more integrated DRAM, the practical resolution should reach 0.7μm, the total register accuracy reaches 0.15