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The properties of defect-induced ferromagnetism(d~0magnetism) in SiC belong to carbon-based material which has been systematically investigated after graphite.In this paper,we reviewed our research progress about d~0 magnetism in two aspects,i.e.,magnetic source and magnetic coupling mechanism.The V_(Si)V_C divacancies have been evidenced as the probable source of d~0 magnetism in SiC.To trace the ferromagnetic source in microscopic and electronic view,the p electrons of the nearest-neighbor carbon atoms,which are around the V_(Si)V_C divacancies,are sourced.For magnetic coupling mechanism,a higher divacancy concentration leads to stronger paramagnetic interaction but not stronger ferromagnetic coupling.So the d~0 magnetism can probably be explained as a local effect which is incapable of scaling up with the volume.
The properties of defect-induced ferromagnetism (d ~ 0magnetism) in SiC belong to carbon-based material which has been systematically investigated after graphite.In this paper, we reviewed our research progress about d ~ 0 magnetism in two aspects, ie, magnetic source and magnetic coupling mechanism.The V_ (Si) V_C divacancies have been evidenced as the probable source of d ~ 0 magnetism in SiC.To trace the ferromagnetic source in microscopic and electronic view, the p electrons of the nearest-neighbor carbon atoms, which are around the V_ (Si) V_C divacancies, are sourced.For magnetic coupling mechanism, a higher divacancy concentration leads to stronger paramagnetic interaction but not stronger ferromagnetic coupling.So the d ~ 0 magnetism can probably be explained as a local effect which is incapable of scaling up with the volume.