论文部分内容阅读
采用脉冲激光烧蚀技术(PLA)在n型Si(100)单晶衬底上制备Tb-Si纳米颗粒。原子力显微镜(AFM)观察样品的表面形貌,发现样品表面是均匀分布的纳米颗粒,颗粒尺寸在10~20 nm之间,分布密度大约为6×1010/cm2。光电子能谱(XPS)及高分辨透射电镜(HRTEM)分析表明,纳米尺度的单晶硅化物颗粒的主要成分为Tb-Si及少量Tb-Si-O结构。室温下以荧光为激发光对样品的光致发光(photoluminescence)性能进行测试,结果表明样品在可见光区具有较强的发光现象,主要有4个发光峰,分别位于485,545,585和620 nm附近,这些发光峰主要由Tb3+中电子在不同能级之间的跃迁造成。
Tb-Si nanoparticles were prepared on n-type Si (100) single crystal substrate by pulsed laser ablation (PLA). Atomic force microscopy (AFM) observed the surface morphology of the sample and found that the sample surface is uniformly distributed nanoparticles with a particle size of 10 ~ 20 nm and a distribution density of about 6 × 1010 / cm2. The results of photoelectron spectroscopy (XPS) and high resolution transmission electron microscopy (HRTEM) show that the main components of nanosize monocrystalline suicide particles are Tb-Si and a small amount of Tb-Si-O. The photoluminescence properties of the samples were tested at room temperature with fluorescence as excitation light. The results showed that the samples had strong luminescence in the visible region and mainly had four luminescence peaks at 485, 545, 585 and 620 nm, respectively. These luminescence The peak is mainly caused by the transition of electrons in Tb3 + between different energy levels.