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采用直流反应磁控溅射法在玻璃和石英衬底上沉积了ZnO薄膜 ,然后将它们在H2 S气流中硫化得到ZnS薄膜 .用x射线粉末衍射仪 (XRD)、扫描电子显微镜 (SEM)和UV VIS透过光谱对ZnS薄膜样品进行了分析 .结果表明 ,该ZnS薄膜为六角晶体结构 ,沿 (0 0 2 )晶面择优取向生长 ,其结晶状态和透过光谱与工作气压、Ar O2 流量比密切相关 .当气压高于 1Pa时 ,得到厚度很小的ZnS薄膜 ;而气压低于 1Pa时 ,沉积的ZnO薄膜则不能全部反应生成ZnS .另外 ,当Ar O2 流量比低于 4∶1或高于 4∶1时 ,结晶状态都会变差 .此外 ,由于ZnS薄膜具有高的沿 (0 0 2 )晶面择优取向的生长特性 ,使得退火或未退火ZnO薄膜硫化后的晶粒尺寸变化很小 .
ZnO thin films were deposited on glass and quartz substrates by direct current reactive magnetron sputtering, and then sulfided to ZnS films in H2 gas stream.The structures of the films were characterized by X-ray powder diffraction (XRD), scanning electron microscopy (SEM) and UV VIS spectra of ZnS thin films were analyzed.The results show that the ZnS thin films have a hexagonal crystal structure and grow preferentially along the (0 0 2) plane, and the crystalline state and the transmission spectra of the films are correlated with the working pressure, Ar O2 flow rate Are closely related.When the pressure is higher than 1Pa, get a small thickness of ZnS thin film; and the gas pressure is lower than 1Pa, the deposited ZnO thin film can not all react to generate ZnS .In addition, when Ar O2 flow ratio is less than 4: 1 or Higher than 4: 1, the crystalline state will be worse.In addition, due to the ZnS film has a (0 0 2) plane along the preferred orientation of the growth characteristics, making annealed or unannealed ZnO film after the change in the grain size is very small .