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本文给出了离子注入片背面激光照射退火的实验结果。用CWCO_2激光器和脉冲钕玻璃激光器从背面照射离子注入片进行退火,不仅可以消除注入损伤,使注入杂质电激活,还可以得到注入图形不发生变化的退火效果。激光背面照射退火可在反刻铝后进行,就能避免激光退火后因再经高温热处理而引起的杂质析出;还可以省掉合金工序。背面照射产生的辐射损伤,也有助于萃取正面的微缺陷。
The experimental results of laser irradiation annealing on the back of ion implanted wafers are given in this paper. The CWCO_2 laser and the pulsed neodymium glass laser are irradiated from the back of the ion implanted wafer for annealing, which not only can eliminate the implanted damage but also electrically activate the implanted impurities, and also can obtain the annealing effect that the implanted pattern does not change. Laser back irradiation annealing can be carried out after anti-etching of aluminum, laser annealing can be avoided due to high temperature heat treatment caused by impurities precipitation; also save the alloy process. Radiation damage from backside irradiation also helps extract positive microdefects.