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Strain-relaxed SiGe virtual substrates are of great importance for fabricating strained Si materials.Instead of using graded buffer method to obtain fully relaxed SiGe film, in this study a new method to obtain relaxed SiGe film and strained Si film with much thinner SiGe film was proposed.Almost fully relaxed thin SiGe buffer layer was obtained by Si/SiGe/Si multi-structure oxidation and the SiO2 layer removing before SiGe regrowth.Raman spectroscopy analysis indicates that the regrown SiGe film has a strain relaxation ratio of about 93% while the Si cap layer has a strain of 0.63%.AFM shows good surface roughness.This new method is proved to be a useful approach to fabricate thin relaxed epilayers and strain Si films.