Structural and photocatalytic properties of TiO2 films fabricated on silicon substrates by MOCVD met

• 作 者: YANGJia-long LIYing WANGFu ZUO
• 机 构: CollegeofMaterialsandMetallurgy,PoHangUniversityofScienceandTechnology
• 出 处: 环境科学学报：英文版
• 发表日期: 2005年1期
• 关键词: 光催化性能 二氧化钛 薄膜 MOCVD法 硅元素 降解活性 MOCVD photocatalystic degradation Silicon(100)
• 基金项目: The National High-Tech R&D Program

Silicon(111) and Silicon(100) were employed for fabrication of TiO2 films by metal organic chemical vapor deposition(MOCVD).Titanium(Ⅳ) isopropoxide(Ti[O(C3H7)4]) was used as a precursor. The as-deposited TiO2 films were characterized with FE-SEM, XRD and