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利用射频溅射方法在n型Si(111)衬底上制备出立方相含量接近100%且粘附性较高的立方氮化硼(c-BN)薄膜.傅里叶变换红外谱(FTIR)的结果表明,基底负偏压对薄膜立方相含量和薄膜压应力有很大影响,另外,衬底的电阻率对c-BN生长和薄膜的压应力也有一定的影响.
A cubic boron nitride (c-BN) thin film with a cubic phase content of nearly 100% and a high adhesion was prepared by RF sputtering on an n-type Si (111) substrate.The Fourier transform infrared spectroscopy (FTIR) The results show that the substrate negative bias has a great influence on the cubic content of the film and the film compressive stress. In addition, the substrate resistivity also has some influence on the c-BN growth and the film compressive stress.