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A multilayered structure consisting of ferroelectric Pb(Zr,Ti)O3 (PZT) film is deposited by sputtering on the crystalline silicon p-n junction without any buffer layer.The photovoltaic output of the p-n junction is greatly enhanced due to the usage of In2O3∶Sn(ITO)/PZT as top surface passivation layers.The short circuit current and photoelectric conversion efficiency of the p-n junction with ITO/PZT ferroelectric films increase about four and six times,respectively,compared with those without any passivation layers.Improvement in the passivated device is mainly attributed to the built-in field at the ITO/PZT interface.