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选用Ni_(65)Co_(35)合金靶材，利用射频磁控溅射的方法成膜，采用四探针法测量磁电阻率，分别研究了溅射工艺参数（工作气压、偏压、功率、基片温度等）对薄膜磁电阻性能的影响，并对影响机理作了理论上的分析；另外还对Ni_(65)Co_(35)薄膜的热处理动力学进行了研究，求取了激活能。研究结果表明，溅射工艺参数对Ni_(65)Co_(35)薄膜的磁电阻率有着较大的影响、适当的溅射参数能有效地提高磁电阻率；Ni_(65)Co_(35)薄膜退火处理后磁电阻率有明显上升，对应的激活能为1．15eV。
The Ni_ (65) Co_ (35) alloy target was selected and deposited by RF magnetron sputtering. The four-probe method was used to measure the magnetic resistivity. The sputtering process parameters (working pressure, bias voltage, Substrate temperature, etc.) on the magnetoresistance properties of the film, and the theoretical analysis of the impact mechanism; In addition, the heat treatment kinetics of Ni_ (65) Co_ (35) thin films was also studied and the activation energy was obtained. The results show that the sputtering parameters have a great influence on the magnetic resistivity of Ni 65 Co 35 films, and the proper sputtering parameters can effectively increase the resistivity of Ni 65 Co 35 films. After annealing, the magnetic resistivity increased significantly, corresponding to an activation energy of 1.15eV.