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在射频集成电路设计中,片上螺旋电感应用非常广泛。对于GaN器件,由于其单晶制备困难,无法进行同质外延,选用SiC作为GaN器件衬底是较为理想的选择。本文将针对SiC衬底进行片上螺旋电感建模,基于Enhance 1-p等效电路模型,可缩放模型中所有集总元件均用与电感的物理尺寸相关联的方程表示,并能准确表征使用同一工艺制造但不同尺寸射频螺旋电感的电性能。对一批具有不同电感值、圈数、线宽、间距、内径的方形螺旋电感进行仿真验证,结果表明,在谐振频率或20GHz以下,等效电路模型的S参数计算值可以很好的吻合电磁仿真结果,幅度相对误差小于10%,相位绝对误差小于5度。
In RFIC design, on-chip spiral inductors are widely used. For GaN devices, due to its single crystal preparation difficulties, can not be homoepitaxial, the selection of SiC as a GaN device substrate is a more ideal choice. In this paper, an on-chip spiral inductor is modeled for a SiC substrate. Based on the Enhance 1-p equivalent circuit model, all the lumped elements in the scalable model are represented by the equations associated with the physical dimensions of the inductor and can accurately characterize the same Electrical properties of RF RF inductors made by a process but of different sizes. A series of square spiral inductors with different values of inductance, number of turns, width, spacing and inner diameter are simulated. The results show that the calculated S-parameters of the equivalent circuit model are well consistent with the electromagnetic Simulation results, the relative amplitude error less than 10%, the absolute phase error less than 5 degrees.