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一、引言六十年代初硅双极功率晶体管的研制开始进入微波领域,从那时起功率晶体管开始闯进长期以来为电子管牢固独占的微波电子管阵地。整个六十年代尤其到七十年代头几年硅微波双极功率晶体管雨后春笋般地向频率更高、功率更大的方向飞速发展。1965年E.O.Johnson 发表了晶体管的功率频率极限问题的研究。梳状图形的结构出现较早,接着出现了复盖图形结构,1967年出现了网状发射极结构,70年又出现了菱形结构。由于微波波段同低频、高频和超高频相比有频率高、频带宽的优点,因此微波功率晶体管很
I. INTRODUCTION The development of silicon bipolar power transistors in the early 1960s started to enter the field of microwaves. Since then, power transistors began to break into microwave tube arrays that have long been the exclusive center of electron tubes. Throughout the sixties, especially to the first few seventies, silicon bipolar power transistors mulberry broadly sprang to higher frequencies and higher power. In 1965 E.O. Johnson published a study of the transistor power frequency limit problem. The structure of the comb pattern appeared earlier, followed by the covered pattern structure, the mesh emitter structure appeared in 1967, and the diamond structure appeared again in 70 years. As the microwave band with low frequency, high frequency and high frequency compared to high frequency, the advantages of bandwidth, so the microwave power transistor is