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逆导型绝缘栅双极型晶体管是一种新型的IGBT器件,它是将IGBT元胞结构以及快恢复二极管(FRD)元胞结构集成在同一个芯片上。逆导型IGBT器件具有小尺寸、高功率密度、低成本、高可靠性等诸多优点,但是逆导型IGBT的电压回跳现象限制了它在实际中的应用。研究了逆导型IGBT器件的结构原理以及回跳现象产生的原因,介绍了引导区结构和背面版图正交布局两种有效抑制回跳现象的方法。通过合理的设计,逆导型IGBT基本上克服了传统的特性缺陷,这将使逆导型IGBT在未来有更为广阔的应用前景。
The reverse-conducting insulated gate bipolar transistor is a new type of IGBT device that integrates the IGBT cell structure and the fast recovery diode (FRD) cell structure on the same chip. Reverse-conduction IGBT devices have many advantages such as small size, high power density, low cost and high reliability, but the voltage jump phenomenon of reverse-conduction IGBT limits its practical application. The structure principle of the reverse-conducting IGBT device and the cause of the back-bounce phenomenon are studied. Two methods of effectively suppressing the back-bounce phenomenon of the lead-in area structure and the back layout orthogonality layout are introduced. Through reasonable design, reverse-conduction IGBT basically overcome the traditional characteristics of defects, which will reverse-oriented IGBT in the future have a broader application prospects.