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本文介绍在研制X波段输出功率为2瓦的GaAs P-N结高-低分布IMPATT器件时,根据水银探针法测得的击穿电压V_B来挑选外延材料的实验结果,确定了在制作该器件时,GaAs高、低二层材料应选取的击穿电压的范围:高区n_1所对应的击穿电压为14伏≤V_(B1)≤20伏,低区为85伏≤V_(B2)≤115伏。
This article describes the experimental results of selecting the epitaxial material based on the breakdown voltage V_B measured by the mercury probe method when developing an GaAs PN junction high-low-distribution IMPATT device with an output of 2 watts at X-band. , The breakdown voltage of GaAs high and low two-layer materials should be selected: the breakdown voltage corresponding to high level n_1 should be 14V≤V_ (B1) ≤20V and the low range should be 85V≤V_ (B2) ≤115 Volt.