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在一定的温度以下 ,某些半导体材料的光电导效应在激发光源撤去以后会持久地保持下去 ,当温度升高超过这个温度 (称为淬变温度 )以后 ,这种持续的光电导现象会消除 ,称为稳恒光电导现象 .而且这种光电导效应具有很强的局域性 .采用电学测量方法 ,通过测量激光照射前后电导率随温度的变化研究了掺 Ge的 Zn Se的稳恒光电导效应 ,结果发现淬变温度高达 2 1 0 K的稳恒光电导效应 .并通过研究光电阻随光照位置变化的趋势研究了这种光电导的局域性特性 ,结果发现在淬变温度以上局域性随稳恒光电导消失而消失
Below a certain temperature, the photoconductivity of certain semiconductor materials persists after the excitation light source is removed, and this persisting photoconductivity disappears when the temperature rises above this temperature (known as the quench temperature) , Which is called the steady photoconductivity phenomenon.And this photoconductive effect has a strong local.The electrical conductivity of the Ge-doped ZnSe was investigated by measuring the change of electrical conductivity with temperature before and after laser irradiation , The results showed that the steady-state photoconductivity of the quenching temperature was up to 210 K. The local characteristics of the photoconductivity were studied by studying the tendency of the photo-resistance as a function of the illumination position. It was found that the photoconductivity above the quenching temperature With the steady disappearance of photoconductivity and disappear