用低压反应离子镀的方法制备Ge1-xCx单层非均匀增透膜的研究

• 作 者: 王彤彤 高劲松 王笑夷 宋琦 陈红 郑宣明 申振峰 单兆会
• 机 构: 中国科学院长春光学精密机械与物理研究所光学技术研究中心,中国科学院长春光学精密机械与物理研究所光学技术研究中心,中国科学院长春光学精密机械与物理研究所光学技术研究中心,中国科学院长春光学精密机械与物理
• 出 处: 光学技术
• 发表日期: 2007年02期
• 关键词: Ge1-xCx 低压反应离子镀(RLVIP) 增透膜 非均匀膜

用低压反应离子镀(RLVIP)的方法在Ge基底上制备了Ge1-xCx单层非均匀增透薄膜。随着沉积速率在0.05~0.4nm/s之间的变化,其折射率在2.31~3.42之间可变。实验结果表明,镀制的Ge1-xCx单层非均匀增透保护薄膜均为无定形结构,并实现了从2000~8000nm的宽波段增透。当沉积速率为0.1nm/s时,单面平均透过率从68.6%提高到了80.9%,比单面未镀膜时提高了17.9%。通过对薄膜的稳定性和牢固度进行测试表明,制备的Ge1-xCx单层非均匀增透薄膜具有良好的性能。

Ge1-xCx monolayer non-uniform antireflection coatings were prepared on Ge substrate by low voltage reactive ion plating (RLVIP). As the deposition rate varies between 0.05 and 0.4 nm / s, the index of refraction varies between 2.31 and 3.42. The experimental results show that the Ge1-xCx monolayer non-uniform antireflective coatings are all amorphous and have a broadband enhancement from 2000 to 8000 nm. When the deposition rate is 0.1nm / s, the average transmittance of one side increases from 68.6% to 80.9%, which is 17.9% higher than that of uncoated one side. The stability and firmness of the films were tested to show that the prepared Ge1-xCx monolayer non-uniform antireflection film has good performance.