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本文报道了由磁控溅射沉积的非晶 Si 薄膜与 Ti 膜组成新的一类超晶格的横向光伏效应。实验发现,这种光伏效应强烈地依赖于超晶格子层厚度及所使用的衬底导电类型。通过合理选择参数,可以得到横向光生伏特与光斑位置成很好的线性关系。
In this paper, we report the lateral photovoltaic effect of a new type of superlattice consisting of an amorphous Si film and a Ti film deposited by magnetron sputtering. It has been found experimentally that this photovoltaic effect strongly depends on the thickness of the superlattice sublayers and the type of substrate conductivity used. Through the reasonable choice of parameters, we can get a good linear relationship between the lateral PV and the spot position.