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利用数值方法研究了SOI脊形光波导损耗问题,重点讨论了PIN结构对自由载流子损耗控制的影响情况。研究表明SOI脊形波导在引入PIN结构后,偏置电压、入射光强和本征区宽度是影响自由载流子吸收损耗的主要因素,通过调整PIN结所加偏置电压、入射光强和本征区宽度,可以实现对脊形波导自由载流子吸收损耗的控制。计算结果可为硅基光调制器和拉曼激光器的设计制备提供一定的参考依据。
The problem of SOI ridge optical waveguide loss has been studied numerically. The influence of pin structure on free carrier loss control has been discussed. The results show that the bias voltage, the incident light intensity and the width of the intrinsic region are the main factors affecting the absorption loss of free carriers after the PIN structure is introduced into the SOI ridge waveguide. By adjusting the PIN junction bias voltage, the incident light intensity and The width of the intrinsic region can control the free carrier absorption loss of the ridge waveguide. The calculated results can provide some references for the design and preparation of Si-based optical modulators and Raman lasers.