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金刚石薄膜电阻率的高低是薄膜绝缘性能优劣的直观反映,也是影响辐射剂量计器件性能的重要因素。针对目前形核工艺与电阻率的关系还不十分清楚的问题。本文研究了微波等离子体形核阶段工艺参数如基片位置、微波功率、甲烷浓度的变化对金刚石薄膜的表面形貌和电阻率的影响。结果表明微波等离子体形核工艺参数对金刚石薄膜的电阻率和表面形貌有显著影响。获得的最佳成核工艺条件:基体温度960℃、甲烷浓度0.72%、压力5.3kPa、微波功率1300W。在此工艺条件下制得的金刚石薄膜的电阻率值达到1011Ω·cm数量级。
The resistivity of diamond film is a direct reflection of the pros and cons of the film insulation performance, and is also an important factor that affects the performance of the radiation dosimeter device. For the current relationship between the nucleation process and the resistivity is not yet very clear. In this paper, the effects of process parameters such as substrate position, microwave power and methane concentration on the surface morphology and resistivity of diamond films during microwave plasma nucleation are studied. The results show that microwave plasma nucleation process parameters have significant influence on the resistivity and surface morphology of diamond films. The best nucleation conditions were obtained: base temperature 960 ℃, methane concentration 0.72%, pressure 5.3kPa and microwave power 1300W. The diamond films prepared under these conditions have resistivity values of the order of 1011 Ω · cm.