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氮化硅是一种优良的介质膜,它的结构致密、硬度大、化学稳定性好,对于B、P、Sb、Al、Zn、O_2、Ga、In有很好的扩散掩蔽能力,特别是对钠离子的移动有很强的阻挡能力。此外由于二氧化硅极易被氢氟酸付蚀,却难于被高频气体等离子体刻蚀,反之氮化硅易于被高频气体等离子体刻蚀,却难于被氢氟酸付蚀。因此氮化硅膜层的应用在表面钝化,予对准和等平面隔离等工艺中得到了发展。
Silicon nitride is an excellent dielectric film. It has a dense structure, high hardness and good chemical stability. It has good diffusion masking ability for B, P, Sb, Al, Zn, O 2, Ga and In, On the movement of sodium ions have a strong barrier. In addition, since silicon dioxide is easily etched by hydrofluoric acid, it is difficult to be etched by high-frequency gas plasma. On the other hand, silicon nitride is easily etched by high-frequency gas plasma, but it is difficult to be etched by hydrofluoric acid. Therefore, the application of the silicon nitride film has been developed in such processes as surface passivation, prealignment and iso-plane isolation.