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1.本征光电探测器及材材的现状与展望当前,红外光电材料及器件的研制工作,主要是围绕最终成批生产价格适宜、性能优良的镶嵌焦平面阵列这一中心目标开展的。HgCdTe材料由于光电性能优良和适用谱区宽(1～30μm)而居于首要地位。据估计,在目前红外光电探测器和材料的研制项目中,HgCdTe方面的项目大约占80～90%。至1990年,材料的主要课题在于成批制造成本低、性能优良的大面积(单晶)薄膜。近年来较集中地开展了HgCdTe液相外延工
1. Current Status and Prospects of Intrinsic Photodetectors and Materials Currently, the development of infrared optoelectronic materials and devices mainly focuses on the central goal of final in-line fabrication of in-plane Focal Plane Arrays at reasonable prices and excellent performance. HgCdTe material due to its excellent optical properties and the applicable spectral width (1 ~ 30μm) and living in the first place. It is estimated that HgCdTe projects account for about 80-90% of the current research projects on infrared photodetectors and materials. By 1990, the major issue of materials was mass production of large area (single crystal) films with low cost and excellent performance. In recent years more focused on the HgCdTe liquid phase epitaxy